کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5356254 | 1388202 | 2015 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of pre-annealed ITO film on the electrical characteristics of high-reflectance Ni/Ag/Ni/Au contacts to p-type GaN
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, a Ni/Ag/Ni/Au multilayer with first Ni layer of 0.5 nm was first optimized for high reflectivity (92.3%), low specific contact resistance (2.1 Ã 10â3 Ω cm2) and good attachment strength to p-type GaN. To further decrease the contact resistance, the p-type GaN surface was previously treated with pre-annealed indium-tin-oxide (ITO) film before deposition of the Ni/Ag/Ni/Au multilayer, and resulted in a lower specific contact resistance of 1.9 Ã 10â4 Ω cm2. The X-ray photoelectron spectroscopy results indicated that Ga 2p core level of the p-type GaN surface with the pre-annealed ITO film had a lower binding energy, leading to a reduction in the contact resistance. Furthermore, GaN-based flip-chip light-emitting diodes (LEDs) with and without the pre-annealed ITO film were fabricated. The average forward voltage of the flip-chip LEDs fabricated with the pre-annealed ITO film is 3.22 V at an injection current density of 35 A/cm2, which is much lower than that (3.49 V) of flip-chip LEDs without the pre-annealed ITO film. These results reveal that the proposed approach is effectively to fabricate high quality p-type contacts toward high power GaN-based LEDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 357, Part B, 1 December 2015, Pages 1703-1707
Journal: Applied Surface Science - Volume 357, Part B, 1 December 2015, Pages 1703-1707
نویسندگان
Xiao-Long Hu, Li Liu, Hong Wang, Xi-Chun Zhang,