کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362534 | 1388289 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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![عکس صفحه اول مقاله: High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) applications](/preview/png/5362534.png)
چکیده انگلیسی
The fabrication of high reflective Ni/Ag/(Ti, Mo)/Au Ohmic contacts for flip-chip light-emitting diode (FCLED) are proposed and considered, Ni/Ag/Au Ohmic contacts are also fabricated to compare their resulting reflectivities. From secondary ion mass spectrometry (SIMS) depth profiles, it indicates that the Au in-diffusion occurs in Ni/Ag/Au contacts after annealing. It is considered that Au in-diffusion, which is intermixed with Ag, Ni and GaN in Ni/Ag/Au contacts after annealing, is responsible for the resulting low reflectance (63% at the wavelength of 465Â nm). To avoid Au in-diffusion and enhance the reflectivity, a diffusion barrier metal (Ti or Mo) between Ni/Ag and Au is fabricated and examined. It is demonstrated and found that an insertion of diffusion barrier metal of Ti enables to block Au diffusion effectively and also improve the reflectivity significantly, up to 93%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6155-6158
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6155-6158
نویسندگان
Liann-Be Chang, Ching-Chuan Shiue, Ming-Jer Jeng,