کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1867562 | 1530624 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electric-field effects in optically generated spin transport
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 373, Issues 23â24, 25 May 2009, Pages 2097-2100
Journal: Physics Letters A - Volume 373, Issues 23â24, 25 May 2009, Pages 2097-2100
نویسندگان
M. Idrish Miah,