کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596071 | 1002804 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Indium incorporation effects on luminescence mechanisms in quaternary AlInGaN layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The optical and structural properties of quaternary AlInGaN layers grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) have been investigated by means of photoluminescence (PL) and time-resolved PL (TRPL) measurements and X-ray diffraction. The AlInGaN layers show strong blueshift and linewidth broadening of the PL emission band with increasing excitation power. With increasing indium mole fraction, the AlInGaN layer exhibited a stronger PL intensity, a faster PL decay, and a smaller lattice mismatch between the AlInGaN layer and the GaN buffer layer. Based on both the PL and TRPL data, we suggest that the incorporation of indium creates more band-tail states and enhances the luminescence efficiency, indicating that the PMOCVD-grown AlInGaN is better suited as the active region material for ultraviolet light-emitting diodes than conventional MOCVD-grown AlInGaN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 142, Issue 10, June 2007, Pages 569-572
Journal: Solid State Communications - Volume 142, Issue 10, June 2007, Pages 569-572
نویسندگان
Mee-Yi Ryu, J.H. Song, C.Q. Chen, M. Asif Khan,