کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1596071 1002804 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Indium incorporation effects on luminescence mechanisms in quaternary AlInGaN layers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
Indium incorporation effects on luminescence mechanisms in quaternary AlInGaN layers
چکیده انگلیسی
The optical and structural properties of quaternary AlInGaN layers grown by a pulsed metalorganic chemical vapor deposition (PMOCVD) have been investigated by means of photoluminescence (PL) and time-resolved PL (TRPL) measurements and X-ray diffraction. The AlInGaN layers show strong blueshift and linewidth broadening of the PL emission band with increasing excitation power. With increasing indium mole fraction, the AlInGaN layer exhibited a stronger PL intensity, a faster PL decay, and a smaller lattice mismatch between the AlInGaN layer and the GaN buffer layer. Based on both the PL and TRPL data, we suggest that the incorporation of indium creates more band-tail states and enhances the luminescence efficiency, indicating that the PMOCVD-grown AlInGaN is better suited as the active region material for ultraviolet light-emitting diodes than conventional MOCVD-grown AlInGaN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 142, Issue 10, June 2007, Pages 569-572
نویسندگان
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