In situ monitoring of periodic structures during MOVPE of III-nitrides

In this paper we focus on the MOVPE and in situ investigation of periodic III-nitride heterostructures and δ-doped layers using laser reflectometry and X-ray diffraction. It is demonstrated that essential structural parameters of periodic structures as periodicity, layer thickness, growth rate and layer composition can be deduced by in situ characterization techniques yielding additional and consistent information about the deposited III-nitride structures in comparison with ex situ analysis.