کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7990078 | 1516125 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of an AlN buffer layer thickness on the structural, morphological and optical properties of n- Al0.37In0.63N deposited on p-Si (111) by radio-frequency sputtering was studied. The AlN/Al0.37In0.63N samples were structurally characterized via X-ray diffraction and high-resolution transmission electron microscopy showing that all layers present wurtzite structure highly oriented along the c-axis with no phase separation. All the samples present compact morphology with root-mean-square surface roughness below 1.7â¯nm and low-temperature photoluminescence emission centered at 1.8â¯eV. The presence of the buffer layer leads to an improvement of the structural quality, evidenced by a reduction of the full width at half maximum of the rocking curve around the (0002) Al0.37In0.63N reflection from 8° to 5°. Selected samples were processed and tested as solar cells showing a good rectifying behavior in the dark and an open circuit voltage of 0.35â¯V, a short circuit current density of 22.2â¯mA/cm2 and fill factor of 20% under 1 sun AM1.5G illumination.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 769, 15 November 2018, Pages 824-830
Journal: Journal of Alloys and Compounds - Volume 769, 15 November 2018, Pages 824-830
نویسندگان
A. Núñez-Cascajero, S. Valdueza-Felip, R. Blasco, M. de la Mata, S.I. Molina, M. González-Herráez, E. Monroy, F.B. Naranjo,