Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE

► InGaN/GaN quantum dot superlattices grown on (11-22) GaN were studied by HRTEM. ► Nominal (11-22) InGaN dots were lenticular-shaped. ► QD size and faceting increased when nucleation occurred on inclined planes. ► Strain and interaction with threading dislocations introduced indium fluctuations. ► Lattice strain analysis was correlated to the indium content.