کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1532341 | 1512131 | 2015 | 56 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deep traps in GaN-based structures as affecting the performance of GaN devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: R: Reports - Volume 94, August 2015, Pages 1-56
Journal: Materials Science and Engineering: R: Reports - Volume 94, August 2015, Pages 1-56
نویسندگان
Alexander Y. Polyakov, In-Hwan Lee,