Structure and strain state of polar and semipolar InGaN quantum dots

► The properties of ultrathin (0 0 0 1) and (112¯2) InGaN quantum dots were compared. ► Polar dots grown at high temperatures exhibited defined truncated morphology. ► Indium interdiffusion was reduced under the employed PAMBE growth scheme. ► Lenticular semipolar quantum dots can be deposited at lower temperatures. ► The indium content in the dots was determined taking a plane stress state.