کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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727848 | 1461398 | 2016 | 7 صفحه PDF | دانلود رایگان |
A controllable approach to the formation of III- nitride nanocrystalline structures using hydrothermal assisted method is presented. The structural and morphological properties of the prepared nanostructures are analyzed using X-ray diffraction, Fast Fourier Transformation and transmission electron microscope techniques. The temperature dependent structural formation of nitride nanostructures have been systematically investigated using X-ray diffraction. Raman spectra of the samples grown at optimized condition exhibited different phonon modes of the respective nitrides (GaN, InN and InxGa1−xN). Nanoparticles and nanorods formation of the indium nitride and indium gallium nitride are observed in the TEM micrographs. FFT analysis revealed that the synthesized III-nitride nanostructures are of good crystalline quality. Nanorods of these nitrides showed better crystalline quality than the nanoparticles in the FFT reflections.
Journal: Materials Science in Semiconductor Processing - Volume 49, July 2016, Pages 61–67