Direct comparison of anisotropic magnetoresistance and planar Hall effect in epitaxial Fe3O4 thin films

► Anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) of an epitaxial Fe3O4 film was directly compared. ► The PHE contains only a twofold angular dependence, but the AMR below 200 K is constituted with both twofold and fourfold symmetric terms. ► We proved that the origin of the fourfold symmetry of AMR is related to the lattice symmetry.