کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10728486 | 1038043 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of silica nanowire arrays by reaction of Si substrate with oxygen using Ga as catalyst
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of silica nanowire arrays by reaction of Si substrate with oxygen using Ga as catalyst Growth of silica nanowire arrays by reaction of Si substrate with oxygen using Ga as catalyst](/preview/png/10728486.png)
چکیده انگلیسی
Silica nanowire arrays were grown by oxidizing Si substrates with Ga catalyst in temperatures of 520-900â°C. The Si substrates, painted with a layer of molten Ga, were placed on a quartz boat, and heated up in a tube furnace. At high temperatures, Ga atoms condense into spheres, along with a small amount of silicon atoms. Si-O-Ga then formed on the surface of Ga-Si alloy sphere, and silica nanowire arrays were eventually grown with typical diameters of about 15-20 nm. A growth model based on extended vapor-liquid-solid mechanism is suggested.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 335, Issue 4, 14 February 2005, Pages 304-309
Journal: Physics Letters A - Volume 335, Issue 4, 14 February 2005, Pages 304-309
نویسندگان
Lun Dai, L.P. You, X.F. Duan, W.C. Lian, G.G. Qin,