کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11002902 | 1450513 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation study of single event effects in the SiC LDMOS with a step compound drift region
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, single event effects (SEE) in a proposed high voltage 4H-SiC lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is studied by using the 2D TCAD device simulator. Firstly, the sensitive volume of the proposed device is determined by the single ion striking different parts of the device. Then, effect of different LET and different drain bias on the transient drain current and lattice temperature has also been investigated. Thirdly, the mechanism of single event burnout has been discussed in detail. Finally, electric fields in gate oxide have been studied. According to simulation results, the sensitive volume is related to the device structure. Moreover, there is an amplification bipolar effect in the time evolution of the drain current, which is due to the activation of the parasitic bipolar transistor near the source region in the proposed device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 91, Part 1, December 2018, Pages 170-178
Journal: Microelectronics Reliability - Volume 91, Part 1, December 2018, Pages 170-178
نویسندگان
Meng-tian Bao, Ying Wang, Xing-ji Li, Chao-ming Liu, Cheng-hao Yu, Fei Cao,