Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer

Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 62, November 2018, Pages 412-418

Yong Hun Lee, Dae Hun Kim, Chaoxing Wu, Tae Whan Kim,