کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11006479 | 1503512 | 2018 | 40 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of sulfurization temperature on the phase purity of Cu2SnS3 thin films deposited via high vacuum sulfurization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
In this study, the deposition of Cu2SnS3 (CTS) thin films was carried out at different sulfurization temperatures in the range of 350-550°C under high vacuum of 1â¯Pa using the sputtered Cu/Sn/Cu metal precursor layers in the sulfur vapor atmosphere. In order to reduce the Sn loss, a particular metal stack of Cu/Sn/Cu was used. Single phase monoclinic (M)-CTS thin film was obtained at 500â¯Â°C. The high intensity Raman modes at 292â¯cmâ1 and 350â¯cmâ1 further confirmed the formation of M-CTS. The M-CTS thin film sulfurized at 500â¯Â°C showed a composition of Cu/Snâ¯=â¯1.89 and an optical band gap energy of 0.94â¯eV. Hall effect measurement of the film sulfurized at 500â¯Â°C with Cu/Sn ratio of 1.82 showed an electrical resistivity of 7.30â¯Î©-cm, carrier concentration of 6.29â¯Ãâ¯1017â¯cmâ3, and mobility of 1.36â¯cm2/Vs. Our results indicate that the copper-poor composition with a stacking order of Cu/Sn/Cu is favored in order to attain the single phase M-CTS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 462, 31 December 2018, Pages 641-648
Journal: Applied Surface Science - Volume 462, 31 December 2018, Pages 641-648
نویسندگان
Mohan Reddy Pallavolu, Vasudeva Reddy Minnam Reddy, Babu Pejjai, Dong-seob Jeong, Chinho Park,