کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11006479 | 1503512 | 2018 | 40 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of sulfurization temperature on the phase purity of Cu2SnS3 thin films deposited via high vacuum sulfurization
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of sulfurization temperature on the phase purity of Cu2SnS3 thin films deposited via high vacuum sulfurization Effect of sulfurization temperature on the phase purity of Cu2SnS3 thin films deposited via high vacuum sulfurization](/preview/png/11006479.png)
چکیده انگلیسی
In this study, the deposition of Cu2SnS3 (CTS) thin films was carried out at different sulfurization temperatures in the range of 350-550°C under high vacuum of 1â¯Pa using the sputtered Cu/Sn/Cu metal precursor layers in the sulfur vapor atmosphere. In order to reduce the Sn loss, a particular metal stack of Cu/Sn/Cu was used. Single phase monoclinic (M)-CTS thin film was obtained at 500â¯Â°C. The high intensity Raman modes at 292â¯cmâ1 and 350â¯cmâ1 further confirmed the formation of M-CTS. The M-CTS thin film sulfurized at 500â¯Â°C showed a composition of Cu/Snâ¯=â¯1.89 and an optical band gap energy of 0.94â¯eV. Hall effect measurement of the film sulfurized at 500â¯Â°C with Cu/Sn ratio of 1.82 showed an electrical resistivity of 7.30â¯Î©-cm, carrier concentration of 6.29â¯Ãâ¯1017â¯cmâ3, and mobility of 1.36â¯cm2/Vs. Our results indicate that the copper-poor composition with a stacking order of Cu/Sn/Cu is favored in order to attain the single phase M-CTS.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 462, 31 December 2018, Pages 641-648
Journal: Applied Surface Science - Volume 462, 31 December 2018, Pages 641-648
نویسندگان
Mohan Reddy Pallavolu, Vasudeva Reddy Minnam Reddy, Babu Pejjai, Dong-seob Jeong, Chinho Park,