Total ionizing dose effects on Ag/ amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memory

Here, the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were designed and prepared, and the total ionizing dose (TID) effects of 60Co γ-ray on the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt resistive switching memories were investigated. The results show that the resistance in low resistance state (LRS), resistance in high resistance state (HRS), and set voltage are almost immune to a TID up to 1 Mrad(Si), whereas the reset voltage and forming voltage are impacted slightly. The good radiation immunity is related to the metallic conductive filaments and the amorphous Bi3.15Nd0.85Ti3O12 matrix. These results suggest that the Ag/amorphous Bi3.15Nd0.85Ti3O12/Pt devices show potential for radiation-hard electronics applications.