کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11007784 | 1840506 | 2019 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phonon-mediated superconductivity in electron-doped monolayer InSe: A first-principles investigation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, we investigated the electron-phonon coupling and superconductivity properties of an electron-doped indium selenide (InSe) monolayer for the first time. Electron doping at 0.1 e/cell induced significant phonon softening of the acoustic ZA mode, a lower frequency Eâ³ mode, and higher frequency Aâ²1 mode, which were responsible for the electron-phonon coupling. Under greater doping at 0.2 e/cell, the electronic density of states at the Fermi level increased remarkably and the two Fermi sheets around Î and M expanded. The transition temperature increased to 3.41â¯K according to the McMillan-Allen-Dynes formula, which is higher than that of 1.7â¯K in silicene with doping at 0.44 e/atom and 2.85â¯K in Na-intercalated MoS2 bilayers calculated using the same method. The phonon-mediated superconductivity predicted in this study combined with the topologically nontrivial characteristics reported previously suggest that few-layer InSe is a potential platform for achieving topologically superconductivity in two dimensions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 125, February 2019, Pages 23-30
Journal: Journal of Physics and Chemistry of Solids - Volume 125, February 2019, Pages 23-30
نویسندگان
Jianyong Chen,