کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11008820 | 1840431 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Delayed auger recombination in silicon measured by time-resolved X-ray scattering
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Delayed auger recombination in silicon measured by time-resolved X-ray scattering Delayed auger recombination in silicon measured by time-resolved X-ray scattering](/preview/png/11008820.png)
چکیده انگلیسی
We report a new method of measuring the non-radiative recombination rate in bulk Silicon. Synchrotron time-resolved x-ray scattering (TRXS) combines femtometer spatial sensitivity with nanosecond time resolution to record the temporal evolution of a crystal lattice following intense ultrafast laser excitation. Modeling this data requires an Auger recombination time that is considerably slower than previous measurements, which were made at lower laser intensities while probing only a relatively shallow surface depth. We attribute this difference to an enhanced Coulomb interaction that has been predicted to occur in bulk materials with high densities of photoexcited charge carriers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Issue 11, November 2018, Pages 1230-1234
Journal: Current Applied Physics - Volume 18, Issue 11, November 2018, Pages 1230-1234
نویسندگان
Wonhyuk Jo, Eric C. Landahl, Seongheun Kim, Dong Ryeol Lee, Sooheyong Lee,