کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11008832 | 1840431 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation and characterization of Mn doped copper nitride films with high photocurrent response
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The Mn-doped copper nitride (Cu3N) films with Mn concentration of 2.0â¯at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped Cu3N films show suitable optical absorption in the visible region and the band gap is â¼1.48â¯eV. A simple photodetector based on Mn doped Cu3N films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1â¯s both for rise and decay time superior to the pure Cu3N. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped Cu3N films for application of photodetectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Issue 11, November 2018, Pages 1306-1312
Journal: Current Applied Physics - Volume 18, Issue 11, November 2018, Pages 1306-1312
نویسندگان
Aiai Yu, Ruiyuan Hu, Wei Liu, Rui Zhang, Jian Zhang, Yong Pu, Liang Chu, Jianping Yang, Xing'ao Li,