کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016467 | 1777112 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Solving 28â¯nm I/O circuit reliability issue due to IC design weakness
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Integrated circuit (IC) reliability failure at field presents significant cost to both manufacturer and consumer. This paper targets reliability issue due to IC design weakness, presenting a case of 28â¯nm Input/Output (I/O) circuit reliability failure, and shows a complete work flow, starting from root cause identification using Final Test (FT) and failure analysis (FA), and ending with design retrofit to solve the issue. The work flow solves a 28â¯nm I/O reliability issue successfully (a narrow metal leads to EOS at field, and design retrofit is done to enlarge metal's current carrying capability). The work flow is applicable to solve general design related reliability problems.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 246-249
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 246-249
نویسندگان
Yi Chao Low, P.K. Tan, S.L. Tan, Y.Z. Zhao, J. Lam,