کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11016476 | 1777112 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Failure signature analysis of power-opens in DDR3 SDRAMs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Open defects in power pins can only be diagnosed indirectly, and these diagnoses are a challenging task in failure analysis due to the failure signature's aliasing to other issues. Open defects cannot be detected by traditional DC-type test methods and can remain a potential risk in stressful device operation. In this work, error signatures in power open faults are experimentally probed to better understand electrical signatures induced by power-open. The power open faults are intentionally injected into a DDR3 SDRAM test platform. The power network inside the DDR3 SDRAM is experimentally found to be asymmetrical. Power-open defects in one power pin produce a range of power noise (0-65â¯mV), depending on the location of the power pin.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 277-281
Journal: Microelectronics Reliability - Volumes 88â90, September 2018, Pages 277-281
نویسندگان
Tan Li, Hosung Lee, Geunyong Bak, Sanghyeon Baeg,