کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
11016509 1777112 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes
چکیده انگلیسی
On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper layer of the passivation has a strong impact on the ageing of the devices. When the upper layer is an Al2O3 Atomic Layer Deposited one, the transistors show a better stability of their electrical parameters than those passivated with the other stacks.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 88–90, September 2018, Pages 418-422
نویسندگان
, , , , , , , , , , , , ,