کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11026547 | 1666374 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electrical properties of MIS structures based on graded band gap Hg0.77Cd0.23Te grown by the molecular beam epitaxy method with the Al2O3 dielectric formed by the plasma enhanced atomic layer deposition method were investigated. It is established that for such structures the recharge of slow states takes place and significantly distorts the form of the capacitance-voltage (C-V) characteristics. A technique is proposed for constructing the C-V curves of HgCdTe MIS structures, which makes it possible to eliminate the effect of slow surface states. It is shown that Al2O3 films are suitable for passivation of infrared detectors due to small flat band voltages leading to the realization of the depletion or weak inversion modes. The hysteresis of electrical characteristics is eliminated when an intermediate CdTe layer with a thickness of about 0.2â¯Î¼m is grown in situ during the epitaxial growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 158, December 2018, Pages 136-140
Journal: Vacuum - Volume 158, December 2018, Pages 136-140
نویسندگان
A.V. Voitsekhovskii, S.N. Nesmelov, S.M. Dzyadukh, V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, G.Y. Sidorov,