Air-stable and balanced split-gate organic transistors

This study suggests a design methodology for air-stable ambipolar materials such that the HOMO/LUMO level of the ambipolar material is 0.3-0.5 eV higher than the target value to compensate for an eventual upward shift that occurs when the device is exposed to ambient air. Based on the methodology, we demonstrate air-stable split-gate OTFTs that show balanced p/n characteristics after ∼120 h of air exposure.204