کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11031065 | 1646086 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Degradation analysis of 3J InGaP/InGaAs/InGaAsN solar cell due to irradiation induced defects with a comparative study on bottom homo and hetero InGaAsN subcell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی های تجدید پذیر، توسعه پایدار و محیط زیست
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چکیده انگلیسی
The influence of irradiation induced traps in the triple junction In0.49Ga0.51P/In0.01Ga0.99As/In0.30Ga0.70As0.98N0.02 solar cell was studied using finite element analysis. The total 3J solar cell structure was simulated separately with homo and hetero InGaAsN structure as the third or bottom subcell. The higher efficient 3J InGaP/InGaAs/InGaAsN solar cell with bottom InGaAsN heterostructure was analyzed by including irradiation induced trap levels. The trap levels correspond to 1â¯MeV electron irradiation with fluence range of 1 à 1014-1 à 1016 in electrons/cm2 at room temperature. We realized that the traps in the middle cell cause more degradation, followed by bottom cell and then top cell. The onset of degradation of solar cell parameters (Jsc, Voc and η) starts at trap concentration 1 à 1013â¯cmâ3, while more degradation occurs beyond 1 à 1016â¯cmâ3. At trap concentration of 1 à 1016 cmâ3, the solar cell design was optimized for achieving current matching among the subcells. While we obtained 36% conversion efficiency at 1-sun (AM0 spectrum) using bottom heterostructure, the introduction of 1 à 1016 cmâ3 trap concentration and 104 cm/s surface recombination velocity simultaneously in all subcells resulted in 20.8% conversion efficiency which increased to 24.3% after current matching.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy - Volume 174, 1 November 2018, Pages 728-734
Journal: Solar Energy - Volume 174, 1 November 2018, Pages 728-734
نویسندگان
M. Sukeerthi, Siva Kotamraju, Raghu Meetei, Prabhu Nireekshana Rao,