کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1136107 1489132 2013 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impact of impedance-dependent receiver gain on the extracted channel thermal noise in sub-100 nm MOSFETs
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی کنترل و سیستم های مهندسی
پیش نمایش صفحه اول مقاله
Impact of impedance-dependent receiver gain on the extracted channel thermal noise in sub-100 nm MOSFETs
چکیده انگلیسی

To continue the pursuit of Moore’s law, process variations become a very crucial aspect in fabrications, characterization, and modeling for devices with feature size in the sub-100 nm region. To characterize these process variations, measurements are conducted over hundreds or thousands of transistors, and the experimental uncertainties due to the instruments are assumed to be smaller than that of the device itself, and therefore often be overlooked. This assumption might be true for I–VI–V, C–VC–V, or scattering parameter measurements, but this is not the case for high-frequency noise characterization. This paper presents, for the first time, evidence that the instrument can easily contribute 10–17% uncertainties in the measured power spectral densities (PSDs) of the channel thermal noise in 90 nm MOSFETs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Mathematical and Computer Modelling - Volume 58, Issues 1–2, July 2013, Pages 355–362
نویسندگان
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