کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1136809 1489162 2011 17 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی کنترل و سیستم های مهندسی
پیش نمایش صفحه اول مقاله
A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
چکیده انگلیسی

This paper can be considered as the natural prosecution of Mascali and Romano (2009) [5]. Here, we describe the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands. The model is still based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle. Comparisons are made with the results in [5], in the case of bulk silicon, in order to establish the importance of non-parabolicity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Mathematical and Computer Modelling - Volume 53, Issues 1–2, January 2011, Pages 213–229
نویسندگان
, ,