Photoluminescence intensity in a semiconductor microcavity

Measurements of the photoluminescence intensity are presented in a semiconductor microcavity showing the strong coupling regime in the 10-80 K range. In spite of the photoluminescence enhancement in the resonance direction, the results are consistent with an overall excitation decay process essentially insensitive to the microcavity effect. Evidence is also given for a non-thermalization of the excitation in the cavity-polariton dispersion relation at least in this temperature range and large detuning conditions.