Low-voltage organic transistors with steep subthreshold slope fabricated on commercially available paper

• Low-voltage organic TFTs were fabricated on commercially available paper.
• The TFTs have a carrier mobility of 1.6 cm2/Vs and an on/off ratio of 106.
• The subthreshold slope (90 mV/dec) is the best reported for TFTs on paper.
• The TFTs also have a very large output resistance.

Organic thin-film transistors were fabricated directly on the surface of commercially available cleanroom paper using the vacuum-deposited small-molecule semiconductor dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT). A thin, high-capacitance gate dielectric that allows the TFTs to be operated with low voltages of 2 V was employed. The TFTs have a charge-carrier mobility of 1.6 cm2/Vs, an on/off current ratio of 106, and a subthreshold slope of 90 mV/decade. In addition, the TFTs also display a very large differential output resistance, which is an important requirement for applications in analog circuits and active-matrix displays.

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