Photolithographic patterning of organic photodetectors with a non-fluorinated photoresist system

• Demonstrated patterning of P3HT:PCBM-based OPDs with a non-fluorinated photoresist.
• Showed no degradation of optoelectrical properties of OPDs after patterning.
• Investigated dark current density dependence on device active area.
• Compared photocurrent with transparent and opaque edge cover layers.

We report on the fabrication of organic photodetectors (OPD) based on isolated islands of P3HT:PCBM. Pattern transfer to the active material was done with photolithography based on non-fluorinated solvents and the excessive organic semiconductor was removed with oxygen plasma reactive ion etching. The photoresist system used was found to be benign to the P3HT:PCBM layer as confirmed by absorption, thickness and roughness measurements. Current–voltage characteristics and external quantum efficiency (EQE) remained unchanged after the patterning process. It was demonstrated that it is possible to photolithographically pattern isolated islands with 200 μm edge length with the same dark current density (<10−5 A/cm2 at −2 V bias voltage) and photocurrent density (>5 × 10−3 A/cm2 at −2 V). Furthermore, concerning the solar cell performance, the patterned, small-area devices showed power conversion efficiency of 2.1% and fill-factor of 60%. Dark current was observed to depend on the size of the remaining semiconductor island, which was demonstrated on OPDs with diameter of 50 μm. The presented results show the feasibility of fabrication of isolated devices based on organic semiconductors patterned with non-fluorinated photolithography.

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