Enhancing charge transport in copper phthalocyanine thin film by elevating pressure of deposition chamber

• We fabricated OTFTs with CuPc films grown under different deposition pressures.
• Enhanced device performance was obtained at high deposition pressure.
• Deposition pressure modulated CuPc molecular packing and orientation.
• Contact resistance decreased when deposition pressure increased.

Copper phthalocyanine (CuPc)-based thin film transistors were fabricated using CuPc films grown under different deposition pressure (Pdep) (ranging from 1.8 × 10−4 Pa to 1.0 × 10−1 Pa). The transistor performance highly depended on Pdep. A field-effect mobility of 2.1 × 10−2 cm2/(V s) was achieved under 1.0 × 10−1 Pa. Detailed investigations revealed that Pdep modulates the molecular packing and orientation of the organic films grown on a SiO2/Si substrate and influences the charge transport. Furthermore, from a device physics point of view, contact resistance of the fabricated transistors decreased when Pdep increased, which was beneficial in reducing energy consumption.

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