کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1263846 | 972083 | 2014 | 7 صفحه PDF | دانلود رایگان |
• Electrical field dependent charge transport mechanisms in P(VDF-TrFE) capacitors.
• N-type behavior determined based on electrical analysis.
• Schottky-limited current dominates at low-intermediate field (E < 20 MV/m).
• Space charge limited conduction observed at higher fields (E > 20 MV/m).
We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed.
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Journal: Organic Electronics - Volume 15, Issue 1, January 2014, Pages 22–28