Muon-spin-relaxation study of organic semiconductor spiro-linked compound

We report on muon-spin-relaxation (μSR) experiment of organic semiconductor spiro-linked compound 2′,7′-bis(N,N–diphenylamino)-2-(5-(4–tert-butylphenyl)-1,3,4-oxadiazol-2-yl)-9,9-spirobifluorene (Spiro-DPO) measured at temperatures between 8 and 300 K and at longitudinal fields up to 395 mT in order to study charge transport properties in organic semiconductor. The μSR time spectra were analyzed by using Risch and Kehr (RK) function and it indicates a transition from one-dimensional hopping transport of charge carriers at low temperatures to two- or three-dimensional hopping transport at high temperatures (>75 K).

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► Muon-spin-relaxation experiment of organic semiconductor spiro-linked compound.
► The data were analyzed by using Risch and Kehr function.
► A transition from 1D at low temperatures to 2D or 3D hopping transport of charge carriers at high temperatures.