Bimorph actuator with monolithically integrated CMOS OFET control

We present an electrostrictive polymer bimorph controllable with low voltage through an integrated CMOS OFET control system. We have actuated the device by applying voltages up to 400 V to the control system, and can actuate the control with 60 V switching. The electrostrictor material was used both as the substrate for the transistors and as the dielectric layer for the control circuitry. This allows for a reduction in the number of layers in the structure, minimizing the clamping effect that would compromise the strain capabilities of the device. We have characterized the macroscopic displacement of the structure through a radius of curvature measurement, ranging from 11.4 mm to 7.5 mm depending on the supply voltage provided. The architecture proposed can be scaled to larger system with higher supply voltages.

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► An EAP bimorph controllable with low voltage signal is presented.
► High voltage organic field effect transistor level shifter controls the circuit.
► The electrostrictive polymer is dielectric layer, substrate and actuating material.
► The mechanical displacement measured through radius of curvature.