کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264011 | 972098 | 2012 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Top-gate type, ambipolar, phosphorescent light-emitting transistors utilizing liquid-crystalline semiconducting polymers by the thermal diffusion method Top-gate type, ambipolar, phosphorescent light-emitting transistors utilizing liquid-crystalline semiconducting polymers by the thermal diffusion method](/preview/png/1264011.png)
In order to obtain phosphorescent emission from organic field-effect transistors, thermal diffusion of a phosphorescent dye at the interface between the active layer and gate insulator was controlled by utilizing the fact that liquid-crystalline semiconducting polymers self-organize due to reorientation of the molecules and increase in the size of the crystalline regions during thermal annealing. For top-gate type devices using poly(alkylfluorene) doped with a red emissive phosphorescent material, ambipolar characteristics and red emission from the phosphorescent material were clearly observed. We demonstrate the possibility of producing phosphorescent organic light-emitting transistors using a liquid-crystalline semiconducting polymer doped with phosphorescent emissive dopants by the thermal diffusion method.
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► Transistors based on liquid-crystalline semiconducting polymers.
► Semiconducting polymer doped with emissive dopants by the thermal diffusion method.
► A top-gate structure was employed for organic light-emitting transistors.
► Ambipolar characteristics and red emission from the phosphorescent material were achieved.
Journal: Organic Electronics - Volume 13, Issue 11, November 2012, Pages 2358–2364