کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264083 | 972103 | 2011 | 7 صفحه PDF | دانلود رایگان |
In this work we use laser direct-write (LDW) to fabricate patterned [Ru(dtb-bpy)3]2+(PF6-)2 electroluminescent devices under ambient processing conditions. Device fabrication is accomplished via laser micromachining of a transparent conducting oxide top electrode, LDW printing the active organo-metallic material, and vapor depositing the bottom electrode. Nuclear magnetic resonance spectroscopy is used to ensure the transfer of damage-free luminophore material. Devices tested in air are shown to exhibit emission spectra, luminous efficiencies, and lifetimes similar to literature values for devices fabricated in nitrogen environments. The versatility of laser direct-write printing is then demonstrated by printing multi-color luminophore patterns with diameters down to 10 μm for future use in high-resolution device fabrication. This approach is compatible with large-area organic electronics that require the fabrication of high-resolution architectures.
Blister-actuated Laser induced forward transfer (BA-LIFT) enables the damage-free patterning of ionic transition metal complexes that show extended electroluminescence in air.Figure optionsDownload as PowerPoint slideHighlights
► Laser direct write printing of organo-metallic luminophores for light emitting diodes.
► Blister-actuated laser induced forward transfer protects material properties.
► Printed films are pin-hole free and exhibit good diode behavior.
► Long lifetimes of >40 min in air at 4 V with >6 cd/m2 are measured.
► Peak 93 cd/m2 at 11 V in air, and luminous efficiency of 0.4 Lm/W at 3 V are observed.
Journal: Organic Electronics - Volume 12, Issue 7, July 2011, Pages 1152–1158