Entirely solution-processed write-once-read-many-times memory devices and their operation mechanism

We investigate the mechanism of operation of low-power write-once-read-many-times (WORM) memory devices based on injection of electrons from ZnO into PEDOT:PSS (polydioxythiophene doped with polystyrenesulfonic acid). Using Raman spectroscopy and in situ absorbance measurements, we directly observe the change of doping level of PEDOT during the device switching. Our results clearly show that the change of device conductance is due to the dedoping of p-doped PEDOT by injected electrons. Based on this understanding, we further demonstrate an entirely solution-processed low-power WORM device by inkjet printing metal electrodes onto arbitrary substrates.

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► The operation mechanism of WORM memory devices based on ZnO and PEDOT:PSS is investigated.
► Spectroscopy is used to investigate the change in PEDOT doping level.
► The change of the doping level of PEDOT is directly observed during device switching.
► An entirely solution-processed low-power WORM device is fabricated by inkjet printing.