کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264119 | 972109 | 2010 | 6 صفحه PDF | دانلود رایگان |

An analysis is presented of the layer-thickness dependent and temperature-dependent current density in sandwich-type electron-only devices based on the amorphous small-molecule organic semiconductor BAlq, which is frequently used in organic light-emitting diodes. The electron transport can be consistently described by assuming a density of states (DOS) which is a superposition of a Gaussian DOS and an exponential trap DOS, with ∼85 and ∼100 meV widths, respectively, using a mobility model which includes the carrier density dependence of the mobility in the Gaussian DOS and assuming either random or spatially correlated site energies. From a comparison of the density of hopping sites obtained from both models and the density of molecules as obtained from chemical analysis, evidence for the presence of correlated disorder is found.
Journal: Organic Electronics - Volume 11, Issue 8, August 2010, Pages 1408–1413