کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264198 | 972113 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol–gel reaction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
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چکیده انگلیسی
The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol–gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol–gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10−9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on–off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol–gel hybrid systems are suitable for gate dielectrics in OTFTs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 11, Issue 6, June 2010, Pages 1145–1148
Journal: Organic Electronics - Volume 11, Issue 6, June 2010, Pages 1145–1148
نویسندگان
June Whan Choi, Ho Gyu Yoon, Jai Kyeong Kim,