کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1264198 972113 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol–gel reaction
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol–gel reaction
چکیده انگلیسی

The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol–gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol–gel process and patterned by UV cross-linking below 120 °C. Leakage currents of dielectric layers remained below 10−9 A under operating voltage and dielectric constants were measured to be ∼6.5 at 10 kHz. The field effect mobility and on–off ratio were ∼0.86 cm2/V s and ∼104, respectively. These results demonstrate that sol–gel hybrid systems are suitable for gate dielectrics in OTFTs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 11, Issue 6, June 2010, Pages 1145–1148
نویسندگان
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