کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1264263 1496828 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Integrated all-organic 8 × 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Integrated all-organic 8 × 8 one transistor-one resistor (1T-1R) crossbar resistive switching memory array
چکیده انگلیسی


• The all-organic 64 bit memory cell array utilizing 1T-1R architecture was demonstrated.
• The 64 bit array show precise addressing due to gating of transistors.
• The 1T-1R cell array encoded letters based on the standard ASCII character code.

Cross-bar array organic resistive memory devices enable high storage density but suffer from the issue of undesired cross-talk. A one transistor-one resistor (1T-1R) architecture offers a potential solution to this issue. However, all organic based 1T-1R architecture has not yet been demonstrated due to the difficulties in fabrication and operational voltage range mismatching between organic resistive memory and organic transistor. Herein, we demonstrate the first all-organic based 64 bit memory cell array utilizing 1T-1R architecture. The transfer and output curves of transistors in the 1T-1R cell array are governed by the memory cell and the 64 bit array show precise addressing due to gating of transistors. Moreover, the 1T-1R cell array encoded letters based on the standard ASCII character code.

Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 29, February 2016, Pages 66–71
نویسندگان
, , , , , , , , ,