کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1264492 972148 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Gate induced leakage and drain current offset in organic thin film transistors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Gate induced leakage and drain current offset in organic thin film transistors
چکیده انگلیسی

Gate bias induced leakage current and drain current offset limit device performance in poly 3-hexylthiophene (P3HT) organic thin film transistors (OTFTs). The drain current offset distorts the drain current in the linear region of the transistor performance curve, making it difficult to extract device parameters. A higher drain current offset corresponds to higher leakage current, which contributes to poor drain current modulation. The drain current offset increases when the semiconductor doping density is higher or when the P3HT film is thicker. We propose that the most probable mechanism for the leakage and drain current offset is uncontrolled expansion of drain/source electrodes. Based on the proposed mechanisms, the drain current offset is dramatically reduced by patterning the active region to reduce non-channel leakage.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 7, Issue 1, February 2006, Pages 16–21
نویسندگان
, , , , ,