Analysis and modelling of lateral heterostructure field-effect bipolar transistors

Lateral heterostructure field-effect bipolar transistors (LH-FEBTs) are thin-film transistors that have a distinct heterojunction located roughly midway between the source and drain contacts, with a p-type semiconductor on one side of the junction, and an n-type semiconductor on the other. These devices have potential in display applications but are relatively new to the research community. In this paper, we describe the fabrication of a hybrid LH-FEBT using pentacene and ZnO as the p- and n-type semiconductors, respectively, and describe its unusual bell-shaped electrical transfer characteristics. Using an equivalent circuit approach, we analyse quantitatively how the main features of the current–voltage curves relate to semiconductor properties such as carrier mobility and threshold voltage – information that is essential to the design of such devices.

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► A lateral heterostructure field-effect bipolar transistor (LH-FEBT) was fabricated.
► LH-FEBTs are new to the field but have applications for light-emitting transistors.
► Electrical characteristics were analysed using an equivalent circuit model.
► Simple equations that relate I–V curves to semiconductor properties were found.
► Our findings will be useful in the design of LH-FEBTs for future applications.