کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1265109 | 972194 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
All-polymer thin film transistors on patterned elastomeric substrates
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: All-polymer thin film transistors on patterned elastomeric substrates All-polymer thin film transistors on patterned elastomeric substrates](/preview/png/1265109.png)
چکیده انگلیسی
A patterned soft elastomeric substrate is utilized for fabricating an all-polymer thin film transistor (TFT). With a polymer solution for the source/drain electrodes, it is difficult to form a well defined narrow channel. The problem is resolved with the aid of a micromolding technique and the patterned substrate. When the all polymer TFT is subjected to bending, the polymer gate dielectric is the layer that experiences the most stress. This stress problem, which can lead to device failure, can be relieved to an extent by introducing a small fraction of ethyl cellulose to the polymer dielectric. The effects of the ethyl cellulose content on the device performance are not significant.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 10, Issue 3, May 2009, Pages 527–531
Journal: Organic Electronics - Volume 10, Issue 3, May 2009, Pages 527–531
نویسندگان
Hyewon Kang, Tae-il Kim, Keon-kook Han, Hong H. Lee,