کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1265248 | 972204 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Organic–inorganic hybrid materials as solution processible gate insulator for organic thin film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Organic–inorganic hybrid materials as solution processible gate insulator for organic thin film transistors Organic–inorganic hybrid materials as solution processible gate insulator for organic thin film transistors](/preview/png/1265248.png)
چکیده انگلیسی
We synthesized organic–inorganic hybrid materials (hybrimers) using a simple non-hydrolytic sol–gel reaction and applied the materials as gate insulators in organic thin film transistors (OTFTs). The hybrimer thin films had smooth and hydrophobic surfaces, and were stable with solvents. In addition, the hybrimer thin films had good electrical properties such as low leakage current and high dielectric strength. The performance of the OTFT with hybrimer gate insulator fabricated by drop casting of regioregular poly(3-hexylthiophene) (P3HT) was similar to that of OTFT with hexamethyldisilazane (HMDS) treated thermally grown SiO2. The hysteresis of RR-P3HT based OTFT with hybrimer gate insulator was negligible.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 8, Issue 6, December 2007, Pages 743–748
Journal: Organic Electronics - Volume 8, Issue 6, December 2007, Pages 743–748
نویسندگان
Chaun Gi Choi, Byeong-Soo Bae,