Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer

► We present that ZnO-SAM is an efficient electron injection and hole blocking layer. ► The high EL efficiency of inverted device is similar to that of conventional device. ► Detailed emissive mechanism of inverted device was discussed with different project. ► Effect of annealing ZnO was analyzed with current-capacitance-voltage comparison.