کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1265559 | 972231 | 2008 | 9 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of interfacial layer thickness on the formation of interface dipole in metal/tris(8-hydroxyquinoline) aluminum interface Effect of interfacial layer thickness on the formation of interface dipole in metal/tris(8-hydroxyquinoline) aluminum interface](/preview/png/1265559.png)
We determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and tris(8-hydroxyquinoline) aluminum using ultraviolet and synchrotron radiation photoemission spectroscopy. After O2 plasma treatment on 20-nm thick metal coated ITO, the work function and interface dipole energy increased. In 2-nm thick metal coated ITO, no change in the interface dipole energy was found though the work function increased. According to the valence band spectra, 2-nm thick metals are fully oxidized, but 20-nm thick metals are partially oxidized after O2 plasma treatment. Therefore, it is considered that the contribution of the surface dipole by the deposition of Alq3 on 2-nm thick metal is lower, resulting in a lower interface dipole. Thus, the thickness of interfacial layer has a great impact on the formation of interface dipole.
Journal: Organic Electronics - Volume 9, Issue 5, October 2008, Pages 678–686