کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1265584 972231 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling hole and electron mobilities in pentacene ab-plane
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Modeling hole and electron mobilities in pentacene ab-plane
چکیده انگلیسی

The master equation coupled with the Marcus–Hush electron transfer theory is applied to solve the charge-carrier mobility in pentacene ab-plane. The two-dimension mobilities of hole and electron-carriers are calculated by numerical method. The calculated intrinsic mobilities for hole and electron-carriers are same order of magnitude. The field induced anisotropic hole-carrier mobilities basically agree with Lee et al. experimental results [J.Y. Lee, S. Roth, Y.W. Park, Appl. Phys. Lett. 88 (2006) 252106]. The direction of the highest hole-carrier mobility is clearly assigned. The influences of electric field and carrier density on the mobility are also investigated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 9, Issue 5, October 2008, Pages 852–858
نویسندگان
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