Low-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulators

We have successfully demonstrated a polymeric semiconductor-based transistor with low-k polymer/high-k metal-oxide (TiO2) bilayer as gate dielectric. The TiO2 layers are readily processable from solution and cured at low temperature, instead of traditionally sputtering or high temperature sintering process, thus may suitable for a low-cost organic field effect transistors (FETs) manufacture. The low-k polymer capped on TiO2 layer could further smooth the TiO2 dielectric surface and suppress the leakage current from grain boundary of TiO2 films. The resulting unpatented P3HT-OFETs could operate with supply voltage less than 10 V and the mobility and threshold voltage were 0.0140 cm2/V s and 1.14 V, respectively. The on/off ratio was 1.0 × 103.