Copper hexafluorophthalocyanine field-effect transistors with enhanced mobility by soft contact lamination

We report enhanced field-effect mobility of hexafluoro-copper phthalocyanine (F16CuPc) transistors made by soft contact lamination. In this way, the damage to organic semiconductor during conventional vacuum deposition of metal electrodes can be avoided. The injection of charge carrier from metal electrodes into semiconductor layer can be improved. Combined with surface chemical treatment of the dielectric layer, an enhanced charge carrier mobility, ca. 0.08 cm2/Vs for F16CuPc devices is achieved, higher than the typical value of 0.03 cm2/Vs for devices made by direct metal deposition methods.