Bottom gate organic field effect transistors made by laser structuring

This paper presents a process to manufacture all-polymer field effect transistors in a bottom gate configuration where all electrodes – including the gate electrode – are patterned using an excimer laser in combination with a scanning unit. This technique yields channel lengths of 10 μm between the source and the drain electrodes. Being a combination of a scanning and a single shot patterning process it is a promising candidate for an industrial process with a resolution of 10 μm and an operational throughput of at least 6 cm2/s.